Datasheet Summary
N-CHANNEL 550V @ Tjmax
- 0.20Ω
- 20A TO-247 MDmesh™ MOSFET
TYPE
VDSS
RDS(on)
(@Tjmax)
550V
< 0.25Ω
20 A
TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES t(s) 100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE uc CHARGE d LOW GATE INPUT RESISTANCE ro TIGHT PROCESS CONTROL AND HIGH P MANUFACTURING YIELDS te DESCRIPTION le The MDmesh™ is a new revolutionary MOSFET o technology that associates the Multiple Drain pros cess with the pany’s PowerMESH™ horizontal b layout. The resulting product has an outstanding low O on-resistance, impressively high dv/dt and excellent
- avalanche characteristics. The adoption of the ) pany’s proprietary...
