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STW45NM50 - N-Channel MOSFET

Datasheet Summary

Features

  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STW45NM50

Datasheet Details

Part number STW45NM50
Manufacturer INCHANGE
File Size 208.62 KB
Description N-Channel MOSFET
Datasheet download datasheet STW45NM50 Datasheet
Additional preview pages of the STW45NM50 datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STW45NM50 ·FEATURES ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 550 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 45 28.4 180 PD Total Dissipation 417 Tch Max.
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