SW069R10VS - N-Channel MOSFET

Inchange Semiconductor

Key Features

With TO-252(DPAK) packaging.
High speed switching.
Easy to use.
Low on resistance, low gate charge.
Excellent avalanche characteristics.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

SW069R10VS n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	SW069R10VS
Manufacturer	Inchange Semiconductor
File Size	204.36 KB
Description	N-Channel MOSFET
Datasheet	SW069R10VS Datasheet

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor SW069R10VS ·FEATURES ·With TO-252(DPAK) packaging ·High speed switching ·Easy to use ·Low on resistance, low gate charge ·Excellent avalanche characteristics. ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·LED backlighting ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous Drain Current-Single Pulsed ±20 70 44 280 PD Total Dissipation 158.