SW069R10VS
SW069R10VS is N-channel MOSFET manufactured by Samwin.
Features
N-channel Enhanced mode TO-220FTS MOSFET
- High ruggedness
- Low RDS(ON) (Typ 9.4mΩ)@VGS=4.5V
(Typ 7.8mΩ)@VGS=10V
- Low Gate Charge (Typ 42nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
TO-220FTS
12 3
1. Gate 2.Drain 3.Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
BVDSS : 100V
: 57A
RDS(ON) : 9.4mΩ@VGS=4.5V
7.8mΩ@VGS=10V
1 3
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