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SW069R10VS - N-channel MOSFET

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

  • N-channel Enhanced mode TO-220FTS MOSFET.
  • High ruggedness.
  • Low RDS(ON) (Typ 9.4mΩ)@VGS=4.5V (Typ 7.8mΩ)@VGS=10V.
  • Low Gate Charge (Typ 42nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW069R10VS
Manufacturer Samwin
File Size 821.00 KB
Description N-channel MOSFET
Datasheet download datasheet SW069R10VS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SW069R10VS Features N-channel Enhanced mode TO-220FTS MOSFET  High ruggedness  Low RDS(ON) (Typ 9.4mΩ)@VGS=4.5V (Typ 7.8mΩ)@VGS=10V  Low Gate Charge (Typ 42nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Synchronous Rectification, Li Battery Protect Board, Inverter TO-220FTS 12 3 1. Gate 2.Drain 3.Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 100V ID : 57A RDS(ON) : 9.4mΩ@VGS=4.5V 7.