Datasheet Details
| Part number | SW069R10VS |
|---|---|
| Manufacturer | Samwin |
| File Size | 821.00 KB |
| Description | N-channel MOSFET |
| Datasheet | SW069R10VS-Samwin.pdf |
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|
Overview: SW069R10VS.
| Part number | SW069R10VS |
|---|---|
| Manufacturer | Samwin |
| File Size | 821.00 KB |
| Description | N-channel MOSFET |
| Datasheet | SW069R10VS-Samwin.pdf |
|
|
|
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
BVDSS : 100V ID : 57A RDS(ON) : 9.4mΩ@VGS=4.5V 7.8mΩ@VGS=10V 2 1 3 Order Codes Item Sales Type Marking Package Packaging 1 SW YS 069R10VS SW069R10VS TO-220FTS TUBE Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy Peak diode recovery dv/dt Total power dissipation (@TC=25oC) Derating factor above 25oC (note 1) (note 2) (note 1) (note 3) TSTG, TJ TL Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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SW069R10VS | N-Channel MOSFET | INCHANGE |
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