SiHFP350
SiHFP350 is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES
- With TO-247 packaging
- With low gate drive requirements
- Easy to drive
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous @Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
16 10
Total Dissipation
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 0.65
UNIT ℃/W
Si HFP350 isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor
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