SiHFP350LC Datasheet | Vishay

FEATURES - Ultra Low Gate Charge - Reduced Gate Drive Requirement - Enhanced 30V VGS Rating - Reduced Ciss, Coss, Crss - Isolated Central Mounting Hole - Dynamic d V/dt Rated - Repetitive Avalanche Rated - pliant to Ro HS Directive 2002/95/EC Available Ro HS- PLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements bined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power transistors for switching applications. The TO-247AC package is preferred for mercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC IRFP350LCPb F Si HFP350LC-E3 IRFP350LC Si HFP350LC ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 2.7 m H, Rg = 25 Ω, IAS = 16 A (see fig. 12). c. ISD ≤ 16 A, d I/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. LIMIT 400 ± 30 16 9.9 64 1.5 390 16 19 190 4.0 - 55 to + 150 300d 10...