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SiHFP350LC - Power MOSFET

General Description

This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs.

Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings.

Key Features

  • Ultra Low Gate Charge.
  • Reduced Gate Drive Requirement.
  • Enhanced 30V VGS Rating.
  • Reduced Ciss, Coss, Crss.
  • Isolated Central Mounting Hole.
  • Dynamic dV/dt Rated.
  • Repetitive Avalanche Rated.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single D TO-247AC S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30V VGS Rating • Reduced Ciss, Coss, Crss • Isolated Central Mounting Hole • Dynamic dV/dt Rated • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs.