T810-800B
T810-800B is Thyristor manufactured by Inchange Semiconductor.
DESCRIPTION
- With TO-252( DPAK ) packaging
- Operating in 3 quadrants
- High mutation capability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching applications
- Phase control、Motor control circuits
- Static switching on inductive or resistive load
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM VRRM IT(RSM) ITSM PG(AV)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
@Tc=110℃
Surge non-repetitive on-state current
50HZ 60HZ
Average gate power dissipation ( over any 20 ms period )
Tj
Operating junction temperature
Tstg Storage temperature
UNIT
80 84
-40~125 ℃
-40~150 ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current
VR=VRRM Rated; Tj=25℃ VD=VDRM Rated; Tj=125℃
VTM On-state voltage
Gate-trigger current
VGT Rth...
