T810-800B Datasheet
T810-800B Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·With TO-252( DPAK ) packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching appli.
ge IGT Gate-trigger current VGT Rth (j-mb) Gate-trigger voltage Junction to mounting base IT=11A Ⅰ VD =12V;RL=30Ω; Ⅱ Ⅲ VD =12V;RL=30Ω; Half cycle MIN MAX UNIT 5 1000 μA 1.55 V 10 10 mA 10 1.3 V 1.6 ℃/W isc website： isc & iscsemi is registered trademark isc Thyris.
T810-800B Datasheet (STMicroelectronics)
STMicroelectronics
Available either in through-hole and surface-mount packages, these devices are suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, .
* On-state rms current, IT(RMS) 8 A
* Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V
* Triggering gate current, IGT 5 to 50 mA
TO-220AB
A2 IPAK
G A2 A1
A2
G A2 A1
TO-220AB Ins.
D²PAK
A2 G A1
A2
G A2 A1
A2 G A1
DPAK
Description
Available either in through-hole and surface-mount.