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T835T-8FP Datasheet Thyristor

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors INCHANGE Semiconductor T835T-8FP.

General Description

·With TO-220F packaging ·Operating in 3 quadrants ·High mutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RSM) ITSM PG(AV) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current @Tc=113℃ Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) @Tc=150℃ Tj Operating junction temperature Tstg Storage temperature MAX UNIT 800 V 800 V 8 A 60 63 A 1 W -40~150 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated;

IDRM Repetitive peak off-state current VD=VDRM Rated;

Tj=25℃;

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