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isc Thyristors
INCHANGE Semiconductor
T835T-8FP
DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM VRRM IT(RSM) ITSM PG(AV)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
@Tc=113℃
Surge non-repetitive on-state current
50HZ 60HZ
Average gate power dissipation ( over any 20 ms period ) @Tc=150℃
Tj
Operating junction temperature
Tstg Storage temperature
MAX
UNIT
800
V
800
V
8
A
60 63
A
1
W
-40~150 ℃
-40~150 ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherw