TIP147F - PNP Transistor

Inchange Semiconductor

General Description

High DC Current Gain Monolithic construction with built in Base-Emitter shunt resistors Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) Complement to Type TIP142F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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Datasheet Details

Part number	TIP147F
Manufacturer	Inchange Semiconductor
File Size	201.84 KB
Description	PNP Transistor
Datasheet	TIP147F Datasheet

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TIP147	PNP Transistor
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isc Silicon PNP Darlington Power Transistor TIP147F DESCRIPTION ·High DC Current Gain ·Monolithic construction with built in Base-Emitter shunt resistors ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type TIP142F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -0.