Excellent Safe Operating Area
DC Current Gain-
: hFE=20-70@IC = -4A
Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1 V(Max)@ IC = -4A
Complement to Type TIP3055
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Design
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isc Silicon PNP Power Transistor
TIP2955
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-70@IC = -4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1 V(Max)@ IC = -4A ·Complement to Type TIP3055 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose switching and amplifier
applications.
TIP2955 Datasheet
