| Part Number | TIP2955 Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.
3 2 1
TO-247
Figure 1. Internal schematic diagrams
Table 1. Devi.
* Low collector-emitter saturation voltage * Complementary NPN - PNP transistors Applications * General purpose * Audio Amplifier Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. 3 2 1 TO-247 Figure 1. . |
TIP2955 Datasheet PDF
The TIP2955 is a Complementary power transistors.
| Part Number | TIP2955 Datasheet |
|---|---|
| Description | (TIP2955 / TIP3055) Silicon Power Transistors |
| Manufacturer | Comset Semiconductors |
| Overview | SEMICONDUCTORS PNP TIP2955 NPN TIP3055 SILICON POWER TRANSISTORS The TIP3055 is a NPN epitaxial-base transistor in TO3PN package.It is intended for power switching circuits, series and shunt regulato. ings Test Condition(s) IC= 30 mA, IB=0 IB =0, VCE = 30 V VCE= 70 V, RBE= 100 Ω VCE= 70 V, VBE= 1.5 V VEB= 7 V, IC=0 IC= 4 A, IB= 400 mA IC= 10 A, IB= 3.3 A IC= 4 A, VCE = 4 V IC= 4 A, VCE = 4 V IC= 10 A, VCE = 4 V VCE= 30 V, t= 1.0 s Non repetitive http://www.DataSheet4U.net/ Min 60 20 5 3 2.5 Ty. |
| Part Number | TIP2955 Datasheet |
|---|---|
| Description | PNP Silicon Power Transistors |
| Manufacturer | onsemi |
| Overview |
Complementary Silicon Power Transistors
TIP3055 (NPN), TIP2955 (PNP)
Designed for general−purpose switching and amplifier applications.
Features
• DC Current Gain −
hFE = 20 − 70 @ IC = 4.0 Adc
• Coll.
* DC Current Gain * hFE = 20 * 70 @ IC = 4.0 Adc * Collector *Emitter Saturation Voltage * VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc * Excellent Safe Operating Area * These are Pb *Free Devices* MAXIMUM RATINGS Symbol Rating Value Unit VCEO VCER VCB VEB IC IB PD Collector * Emitter Voltage Collec. |
| Part Number | TIP2955 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1 V(Max)@ IC = -4A ·Complement to Type TIP3055 ·Minimum Lot-to-Lot variation. isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A ;IB= -0.4A VCE(sat)-2 Collector-Emitter Saturati. |