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TIP32C Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistors.

General Description

·Collector-Emitter Saturation Voltage- : VCE(sat) = -1.2V(Max.)@IC= -3.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type TIP31C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-base Voltage -100 V VCEO Collector-emitter Voltage -100 V VEBO Emitter-base Voltage -5 V IC Collector Current-Continuous ICM Collector Current-Pulse IB Base Current Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature -3 A -5 A -1 A 40 W 2 150 ℃ Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.125 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W TIP32C isc Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage ICES Collector Cutoff Current ICEO Collector Cutoff Current IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= -30mA;

IB= 0 IC= -3A;

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