Datasheet Details
| Part number | TIP36Cx2 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.84 KB |
| Description | PNP Transistor |
| Datasheet | TIP36Cx2-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistors INCHANGE Semiconductor TIP36C*2.
| Part number | TIP36Cx2 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.84 KB |
| Description | PNP Transistor |
| Datasheet | TIP36Cx2-INCHANGE.pdf |
|
|
|
·High Current Capability ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -40 A ICM Collector Current-peak -50 A IB Base Current -5 A PC Collector Power Dissipation@TC=25℃ 200 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.0 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor TIP36C*2 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -15A ;IB= -1.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -25A;
IB= -5A VBE(on)-1 Base-Emitter On Voltage IC= -15A ;
| Part Number | Description |
|---|---|
| TIP36C | PNP Transistor |
| TIP36 | PNP Transistor |
| TIP36A | PNP Transistor |
| TIP36AB | PNP Transistor |
| TIP36AF | PNP Transistor |
| TIP36AT | PNP Transistor |
| TIP36B | PNP Transistor |
| TIP36D | PNP Transistor |
| TIP36E | PNP Transistor |
| TIP36F | PNP Transistor |