DC Current Gain-
: hFE= 25(Min)@IC = -1.5A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min)
Complement to Type TIP35CF
Current Gain-Bandwidth Product-
: fT= 3.0MHz(Min)@IC= -1.0A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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isc Silicon PNP Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 25(Min)@IC = -1.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min) ·Complement to Type TIP35CF ·Current Gain-Bandwidth Product-
: fT= 3.0MHz(Min)@IC= -1.0A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications.