Datasheet Details
| Part number | TIP30D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.05 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | TIP30D-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | TIP30D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.05 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | TIP30D-InchangeSemiconductor.pdf |
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·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 120V(Min) ·Complement to Type TIP32D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 5 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 1 A 40 W 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 3.125 ℃/W TIP31D isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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TIP30 | PNP POWER TRANSISTORS | Central Semiconductor |
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TIP30 | PNP PLASTIC POWER TRANSISTORS | CDIL |
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TIP30 | PNP SILICON POWER TRANSISTORS | Power Innovations Limited |
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TIP30 | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
 |
TIP30 | Silicon PNP Power Transistors | SavantIC |
| Part Number | Description |
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| TIP131 | Silicon NPN Darlington Power Transistor |