TIP30D
DESCRIPTION
- DC Current Gain -h FE = 25(Min)@ IC= 1A
- Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 120V(Min)
- plement to Type TIP32D
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
℃
Tstg
Storage Ttemperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER...
