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TIPL765 - NPN Transistor

General Description

125W at 25℃ case temperature 10A continue collector current High-voltage,high forward and reverse energy 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for automotive ignition and switching

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Part Number Description Manufacturer
TIPL765 NPN SILICON POWER TRANSISTORS Power Innovations Limited
TIPL765A NPN SILICON POWER TRANSISTORS Power Innovations Limited
TIPL760 NPN SILICON POWER TRANSISTORS Power Innovations Limited
TIPL760A NPN SILICON POWER TRANSISTORS Power Innovations Limited
TIPL760B NPN SILICON POWER TRANSISTORS Power Innovations Limited

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isc Silicon NPN Power Transistors DESCRIPTION ·125W at 25℃ case temperature ·10A continue collector current ·High-voltage,high forward and reverse energy ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for automotive ignition and switching regulator applications ·Characterized for operation in ignition and switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 10 A ICM Collector Current-peak 15 A PC Collector Power Dissipation@ TC=25℃ 125 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150