Datasheet4U Logo Datasheet4U.com

TIPL760C - NPN Transistor

General Description

Rugged Triple-duffused planar construction ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Peak collector current PC Collector Power Dissipation @TC=25℃ Tj Ju

Key Features

  • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 550V(Min. ).
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TIPL760C NPN SILICON POWER TRANSISTORS Power Innovations Limited
TIPL760 NPN SILICON POWER TRANSISTORS Power Innovations Limited
TIPL760A NPN SILICON POWER TRANSISTORS Power Innovations Limited
TIPL760B NPN SILICON POWER TRANSISTORS Power Innovations Limited
TIPL761 NPN SILICON POWER TRANSISTORS Power Innovations Limited

Other Datasheets by Inchange Semiconductor

Part Number Description
TIPL765 NPN Transistor
TIP100 NPN Transistor
TIP101 NPN Transistor
TIP102 NPN Transistor
TIP105 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor FEATURES ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 550V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Rugged Triple-duffused planar construction ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Peak collector current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 1200 V 550 V 10 V 4 A 8 A 75 W 150 ℃ -65~150 ℃ TIPL760C isc website：www.iscsemi.