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TIPL760C - NPN Transistor

Description

Rugged Triple-duffused planar construction ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Peak collector current PC Collector Power Dissipation @TC=25℃ Tj Ju

Features

  • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 550V(Min. ).
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TIPL760C

Datasheet Details

Part number TIPL760C
Manufacturer INCHANGE
File Size 208.25 KB
Description NPN Transistor
Datasheet download datasheet TIPL760C Datasheet
Additional preview pages of the TIPL760C datasheet.

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Full PDF Text Transcription

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isc Silicon NPN Darlington Power Transistor FEATURES ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 550V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Rugged Triple-duffused planar construction ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Peak collector current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 1200 V 550 V 10 V 4 A 8 A 75 W 150 ℃ -65~150 ℃ TIPL760C isc website：www.iscsemi.
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