Datasheet4U Logo Datasheet4U.com

TJ9A10M3 - N-Channel MOSFET

Datasheet Summary

Features

  • br>.
  • Low drain-source on-resistance: RDS(on) ≤0.17Ω. (VGS = -10 V).
  • Enhancement mode: Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – TJ9A10M3

Datasheet Details

Part number TJ9A10M3
Manufacturer INCHANGE
File Size 239.09 KB
Description N-Channel MOSFET
Datasheet download datasheet TJ9A10M3 Datasheet
Additional preview pages of the TJ9A10M3 datasheet.

📁 Similar Datasheet

  • TJ9A10M3 - MOSFETs (Toshiba Semiconductor)
  • TJ9198 - 300mA Fast Transient CMOS LDO Regulator (HTC)
  • TJ9910 - Universal High Brightness LED Driver (HTC)
  • TJ9910A - Universal High Brightness LED Driver (HTC)
Other Datasheets by INCHANGE

    Full PDF Text Transcription

    Click to expand full text
    isc N-Channel MOSFET Transistor INCHANGE Semiconductor TJ9A10M3，ITJ9A10M3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.17Ω. (VGS = -10 V) ·Enhancement mode: Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -9 IDM Drain Current-Single Pulsed -18 PD Total Dissipation @TC=25℃ 19 Tj Max.
    Published: |