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TJ9A10M3 - N-Channel MOSFET

Key Features

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  • Low drain-source on-resistance: RDS(on) ≤0.17Ω. (VGS = -10 V).
  • Enhancement mode: Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TJ9A10M3，ITJ9A10M3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.17Ω. (VGS = -10 V) ·Enhancement mode: Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -9 IDM Drain Current-Single Pulsed -18 PD Total Dissipation @TC=25℃ 19 Tj Max.