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TJ9A10M3 - MOSFETs

Datasheet Summary

Features

  • (1) (2) (3) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (.

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Datasheet Details

Part number TJ9A10M3
Manufacturer Toshiba Semiconductor
File Size 199.10 KB
Description MOSFETs
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    TJ9A10M3 MOSFETs Silicon P-Channel MOS (U-MOS) TJ9A10M3 1. Applications • Switching Voltage Regulators Low drain-source on-resistance: RDS(ON) = 120 mΩ (typ.) (VGS = -10 V) 2. Features (1) (2) (3) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4.
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