TJ9A10M3 - MOSFETs

Product Overview

Toshiba Semiconductor

Part number	TJ9A10M3
Manufacturer	Toshiba Semiconductor
File Size	199.10 KB
Description	MOSFETs
Datasheet	TJ9A10M3 Datasheet
Additional preview pages of the TJ9A10M3 datasheet.

(1) (2) (3) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (.

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Published: Sep 11, 2014 |