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TK10A50W - N-Channel MOSFET

Key Features

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  • Low drain-source on-resistance: RDS(ON) = 0.38Ω.
  • Easy to control Gate switching.
  • Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.5 mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK10A50W，ITK10A50W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.38Ω ·Easy to control Gate switching ·Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.5 mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 9.7 IDM Drain Current-Single Pulsed 38.8 PD Total Dissipation @TC=25℃ 30 Tj Max.