| Part Number | TK10A50W Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
TK10A50W，ITK10A50W
·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.38Ω ·Easy to control Gate switching ·Enhancement mode: Vth = 2.7 to 3.
*Low drain-source on-resistance: RDS(ON) = 0.38Ω *Easy to control Gate switching *Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.5 mA) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Switching Voltage Regulators *ABSOL. |
TK10A50W Datasheet and Specifications PDF
The TK10A50W is a N-Channel MOSFET.
| Part Number | TK10A50W Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Toshiba |
| Overview | MOSFETs Silicon N-Channel MOS (DTMOS) TK10A50W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Struct. (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK10A50W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolu. |