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TK10A80E - N-Channel MOSFET

Key Features

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  • Low drain-source on-resistance: RDS(on) ≤1.0Ω.
  • Enhancement mode: Vth = 2.5 to4.0V (VDS = 10 V, ID=1.0mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK10A80E，ITK10A80E ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤1.0Ω. ·Enhancement mode: Vth = 2.5 to4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 30 PD Total Dissipation @TC=25℃ 50 Tj Max.