TK10A80E Datasheet Silicon N-channel MOSFET

Manufacturer: Toshiba

Overview: TK10A80E MOSFETs Silicon N-Channel MOS (π-MOS) TK10A80E 1. Applications • Switching Voltage Regulators 2.

Datasheet Details

Part number	TK10A80E
Manufacturer	Toshiba
File Size	219.34 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK10A80E-ToshibaSemiconductor.pdf

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ. ) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-10 2014-03-04 Rev.3.0 TK10A80E 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulse.

Part Number	Description	Manufacturer
TK10A80E	N-Channel MOSFET	INCHANGE
TK10A80W	Silicon N-Channel MOSFET	Toshiba
TK10A80W	N-Channel MOSFET	INCHANGE