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TK10A80E - Silicon N-Channel MOSFET

Key Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ. ) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-10 2014-03-04 Rev.3.0 TK10A80E 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulse.

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Datasheet Details

Part number TK10A80E
Manufacturer Toshiba
File Size 219.34 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK10A80E Datasheet

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TK10A80E MOSFETs Silicon N-Channel MOS (π-MOS) TK10A80E 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-10 2014-03-04 Rev.3.0 TK10A80E 4.