• Part: TK10A80E
  • Description: Silicon N-Channel MOSFET
  • Manufacturer: Toshiba
  • Size: 219.34 KB
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Datasheet Summary

MOSFETs Silicon N-Channel MOS (π-MOS) 1. Applications - Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of mercial production 2013-10 2014-03-04 Rev.3.0 4....