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TK10A80W - N-Channel MOSFET

Key Features

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  • Low drain-source on-resistance: RDS(ON) = 0.46Ω (typ. ).
  • Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.45mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK10A80W，ITK10A80W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.46Ω (typ.) ·Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.45mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9.5 IDM Drain Current-Single Pulsed 38 PD Total Dissipation @TC=25℃ 40 Tj Max.