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TK12A80W - TO-220 N-Channel MOSFET

Key Features

  • Low drain-source on-resistance: RDS(ON) = 450mΩ (MAX).
  • Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.57mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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iscN-Channel MOSFET Transistor TK12A80W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 450mΩ (MAX) ·Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.57mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 11.5 A IDM Drain Current-Single Pulsed 46 A PD Total Dissipation @TC=25℃ 165 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.757 ℃/W isc website：www.iscsemi.