TK12A80W Datasheet

The TK12A80W is a TO-220F N-Channel MOSFET.

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Part NumberTK12A80W
ManufacturerInchange Semiconductor
Overview iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK12A80W，ITK12A80W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.38Ω (typ.) ·Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.57mA.
*Low drain-source on-resistance: RDS(ON) = 0.38Ω (typ.)
*Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.57mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching Voltage Regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃.
Part NumberTK12A80W
DescriptionTO-220 N-Channel MOSFET
ManufacturerInchange Semiconductor
Overview iscN-Channel MOSFET Transistor TK12A80W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 450mΩ (MAX) ·Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.57mA) ·100% avalanche tested ·Minimum .
*Low drain-source on-resistance: RDS(ON) = 450mΩ (MAX)
*Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.57mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching Voltage Regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃).
Part NumberTK12A80W
DescriptionSilicon N-Channel MOSFET
ManufacturerToshiba
Overview MOSFETs Silicon N-Channel MOS (DTMOS) TK12A80W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction Structure. (1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, ID = 0.57 mA) 3. Packaging and Internal Circuit TK12A80W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute .