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TK12J60U - N-Channel MOSFET

Datasheet Summary

Features

  • Low drain-source on-resistance: RDS(on) ≤0.4Ω.
  • Enhancement mode: Vth =3.0 to 5.0V (VDS = 10 V, ID=1mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TK12J60U

Datasheet Details

Part number TK12J60U
Manufacturer INCHANGE
File Size 264.69 KB
Description N-Channel MOSFET
Datasheet download datasheet TK12J60U Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor TK12J60U ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.4Ω. ·Enhancement mode: Vth =3.0 to 5.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pulsed 24 A PD Total Dissipation @TC=25℃ 144 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.868 ℃/W isc website：www.iscsemi.
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