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TK18A30D - N-Channel MOSFET

Key Features

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  • Low drain-source on-resistance: RDS(ON) = 0.1Ω (typ. ).
  • Enhancement mode: Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK18A30D，ITK18A30D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.1Ω (typ.) ·Enhancement mode: Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 300 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 72 PD Total Dissipation @TC=25℃ 45 Tj Max.