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TK18A30D - Silicon N-Channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ. ) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK18A30D 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 300 V Gate-source voltage VGSS ±20 Drain current (DC) Drain current (pulsed).

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Datasheet Details

Part number TK18A30D
Manufacturer Toshiba
File Size 223.91 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK18A30D Datasheet

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MOSFETs Silicon N-Channel MOS (π-MOS) TK18A30D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK18A30D 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4.