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TK19A50W - N-Channel MOSFET

Datasheet Summary

Features

  • Low drain-source on-resistance: RDS(ON) = 0.16Ω (typ. ).
  • Easy to control Gate switching.
  • Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.79 mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number TK19A50W
Manufacturer INCHANGE
File Size 248.87 KB
Description N-Channel MOSFET
Datasheet download datasheet TK19A50W Datasheet
Additional preview pages of the TK19A50W datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK19A50W, ITK19A50W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.16Ω (typ.) ·Easy to control Gate switching ·Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.79 mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 18.5 IDM Drain Current-Single Pulsed 63.2 PD Total Dissipation @TC=25℃ 40 Tj Max.
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