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TK19A50W - N-Channel MOSFET

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Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK19A50W TO-220SIS 1: Gate 2: Drain 3: Source ©2015 Toshiba Corporation 1 Start of commercial production 2015-04 2015-12-08 Rev.2.0 TK19A50W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Uni.

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Datasheet Details

Part number TK19A50W
Manufacturer Toshiba
File Size 251.11 KB
Description N-Channel MOSFET
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MOSFETs Silicon N-Channel MOS (DTMOS) TK19A50W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK19A50W TO-220SIS 1: Gate 2: Drain 3: Source ©2015 Toshiba Corporation 1 Start of commercial production 2015-04 2015-12-08 Rev.2.0 TK19A50W 4.
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