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TK20A60W5 - N-Channel MOSFET

Key Features

  • Low drain-source on-resistance: RDS(ON) = 0.15Ω (typ. ).
  • Easy to control Gate switching.
  • Enhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=1mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK20A60W5, ITK20A60W5 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.15Ω (typ.) ·Easy to control Gate switching ·Enhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 80 PD Total Dissipation @TC=25℃ 45 Tj Max.