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TK20A60W5 - Silicon N-Channel MOSFET

Key Features

  • (1) (2) (3) (4) Fast reverse recovery time: trr = 110 ns (typ. ) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-06 2014-02-25 Rev.4.0 TK20A60W5 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-sou.

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Datasheet Details

Part number TK20A60W5
Manufacturer Toshiba
File Size 234.56 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK20A60W5 Datasheet

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Full PDF Text Transcription (Reference)

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TK20A60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK20A60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Fast reverse recovery time: trr = 110 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-06 2014-02-25 Rev.4.0 TK20A60W5 4.