Datasheet4U Logo Datasheet4U.com

TK28E65W - N-Channel MOSFET

Features

  • br>.
  • Low drain-source on-resistance: RDS(on) ≤0.11Ω.
  • Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=1.6mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – TK28E65W

Datasheet Details

Part number TK28E65W
Manufacturer INCHANGE
File Size 241.68 KB
Description N-Channel MOSFET
Datasheet download datasheet TK28E65W Datasheet
Additional preview pages of the TK28E65W datasheet.

📁 Similar Datasheet

  • TK28E65W - N-Channel MOSFET (Toshiba)
  • TK28A65W - N-Channel MOSFET (Toshiba)
  • TK28N65W - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK28N65W5 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK28V65W - Silicon N-Channel MOSFET (Toshiba)
  • TK28V65W5 - Silicon N-Channel MOSFET (Toshiba)
  • TK200F04N1L - Silicon N-Channel MOSFET (Toshiba)
  • TK2019 - STEREO 20W (4OHM) CLASS-T DIGITAL AUDIO AMPLIFIER (Tripath)
  • TK2050 - STEREO 50W (8OHM) CLASS-T DIGITAL AUDIO AMPLIFIER (Tripath)
  • TK2051 - STEREO 50W (8ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER (Tripath Technology)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK28E65W，ITK28E65W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.11Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=1.6mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 27.6 IDM Drain Current-Single Pulsed 110 PD Total Dissipation @TC=25℃ 230 Tj Max.
Published: |