TK28E65W - N-Channel MOSFET

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Toshiba

Part number	TK28E65W
Manufacturer	Toshiba
File Size	307.17 KB
Description	N-Channel MOSFET
Datasheet	TK28E65W Datasheet
Additional preview pages of the TK28E65W datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 0.094 Ω (typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.6 mA) 3. Packaging and Internal Circuit TK28E65W 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power.

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Published: Oct 4, 2020 |