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TK2P90E - N-Channel MOSFET

Features

  • Low drain-source on-resistance: RDS(on) ≤2.9Ω.
  • Enhancement mode: Vth = 2.5 to4.0V (VDS = 10 V, ID=0.2mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TK2P90E

Datasheet Details

Part number TK2P90E
Manufacturer INCHANGE
File Size 271.59 KB
Description N-Channel MOSFET
Datasheet download datasheet TK2P90E Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤2.9Ω. ·Enhancement mode: Vth = 2.5 to4.0V (VDS = 10 V, ID=0.2mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 2 A IDM Drain Current-Single Pulsed 6 A PD Total Dissipation @TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 1.56 ℃/W TK2P90E isc website：www.iscsemi.
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