TK2P90E Datasheet N-channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon N-Channel MOS (π-MOS) TK2P90E 1. Applications • Switching Voltage Regulators 2.

Datasheet Details

Part number	TK2P90E
Manufacturer	Toshiba
File Size	326.05 KB
Description	N-Channel MOSFET
Datasheet	TK2P90E-Toshiba.pdf

Key Features

(1) Low drain-source on-resistance: RDS(ON) = 4.7 Ω (typ. ) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TK2P90E 1: Gate 2: Drain(Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 2 A Drain.

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Brand Logo	Part Number	Description	Manufacturer
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