Datasheet4U Logo Datasheet4U.com

TK2P90E - N-Channel MOSFET

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 4.7 Ω (typ. ) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TK2P90E 1: Gate 2: Drain(Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 2 A Drain.

📥 Download Datasheet

Datasheet preview – TK2P90E

Datasheet Details

Part number TK2P90E
Manufacturer Toshiba
File Size 326.05 KB
Description N-Channel MOSFET
Datasheet download datasheet TK2P90E Datasheet
Additional preview pages of the TK2P90E datasheet.

📁 Similar Datasheet

  • TK2P90E - N-Channel MOSFET (INCHANGE)
  • TK2P60D - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK2019 - STEREO 20W (4OHM) CLASS-T DIGITAL AUDIO AMPLIFIER (Tripath)
  • TK2050 - STEREO 50W (8OHM) CLASS-T DIGITAL AUDIO AMPLIFIER (Tripath)
  • TK2051 - STEREO 50W (8ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER (Tripath Technology)
  • TK2070 - STEREO 70W (4Ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER (Tripath Technology)
  • TK20A - Current Transducer (Topstek)
  • TK20A20D - N-Channel MOSFET (INCHANGE)
  • TK20A25D - N-Channel MOSFET (INCHANGE)
  • TK20A60U - N-Channel MOSFET (INCHANGE)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
MOSFETs Silicon N-Channel MOS (π-MOS) TK2P90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TK2P90E 1: Gate 2: Drain(Heatsink) 3: Source DPAK 4.
Published: |