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TK32E12N1 - N-Channel MOSFET

Key Features

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  • Low drain-source on-resistance: RDS(on) ≤13.8mΩ. (VGS = 10 V).
  • Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription for TK32E12N1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TK32E12N1. For precise diagrams, and layout, please refer to the original PDF.

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK32E12N1，ITK32E12N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤13.8mΩ. (VGS = 10 V) ·Enhancement mode: Vt...

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rce on-resistance: RDS(on) ≤13.8mΩ. (VGS = 10 V) ·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 110 PD Total Dissipation @TC=25℃ 98 Tj Max.

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Toshiba Logo TK32E12N1 Silicon N-Channel MOSFET Toshiba

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