TK32E12N1 - Silicon N-Channel MOSFET

Toshiba

Key Features

(1) Low drain-source on-resistance: RDS(ON) = 11.0 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK32E12N1 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (p.

TK32E12N1 silicon n-channel mosfet by Toshiba - Datasheet Preview

Datasheet Details

Part number	TK32E12N1
Manufacturer	Toshiba
File Size	252.70 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK32E12N1 Datasheet

Full PDF Text Transcription for TK32E12N1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TK32E12N1. For precise diagrams, and layout, please refer to the original PDF.

MOSFETs Silicon N-channel MOS (U-MOS-H) TK32E12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 11.0 mΩ (typ.)...

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Features (1) Low drain-source on-resistance: RDS(ON) = 11.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK32E12N1 1: Gate 2: Drain (heatsink) 3: Source TO-220 4.

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