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TK35A65W5 - N-Channel MOSFET

Key Features

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  • Low drain-source on-resistance: RDS(ON) = 0.08Ω (typ. ).
  • Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=2.1mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription for TK35A65W5 (Reference)

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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK35A65W5，ITK35A65W5 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.08Ω (typ.) ·Enhancement mode: Vth = 3 t...

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rce on-resistance: RDS(ON) = 0.08Ω (typ.) ·Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=2.1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 35 IDM Drain Current-Single Pulsed 140 PD Total Dissipation @TC=25℃ 50 Tj Max.

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