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TK35A65W5 - Silicon N-Channel MOSFET

Features

  • (1) (2) (3) (4) Fast reverse recovery time: trr = 130 ns (typ. ) Low drain-source on-resistance: RDS(ON) = 0.08 Ω (typ. ) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 2.1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-09 2014-02-25 Rev.2.0 TK35A65W5 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-sou.

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Datasheet Details

Part number TK35A65W5
Manufacturer Toshiba Semiconductor
File Size 239.92 KB
Description Silicon N-Channel MOSFET
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TK35A65W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK35A65W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Fast reverse recovery time: trr = 130 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.08 Ω (typ.) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 2.1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-09 2014-02-25 Rev.2.0 TK35A65W5 4.
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