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TK380P60Y - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤0.38Ω.
  • Easy to control Gate switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TK380P60Y

Datasheet Details

Part number TK380P60Y
Manufacturer INCHANGE
File Size 314.43 KB
Description N-Channel MOSFET
Datasheet download datasheet TK380P60Y Datasheet
Additional preview pages of the TK380P60Y datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor TK380P60Y ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Easy to control Gate switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous IDM Drain Current-Single Pulsed PD Total Dissipation @TC=25℃ Tj Operating Junction And Storage Temperature Tstg ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance 2 13 VALUE 600 ±30 9.7 38.8 80 -55~150 UNIT V V A A W ℃ MAX 1.
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