TK380P60Y Datasheet Silicon N-Channel MOSFET

Manufacturer: Toshiba

Datasheet Details

MOSFETs Silicon N-Channel MOS (DTMOS) TK380P60Y TK380P60Y 1.

Applications • Switching Voltage Regulators 2.

(1) Low drain-source on-resistance: RDS(ON) = 0.29 Ω (typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.36 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Tc = 25 ) (Note 1) ID 9.7.

Brand Logo	Part Number	Description	Manufacturer
	TK380P60Y	N-Channel MOSFET	INCHANGE