Datasheet Summary
iscN-Channel MOSFET Transistor
- Features
- Low drain-source on-resistance:
RDS(ON) = 3Ω (MAX) (VGS = 10 V)
- Enhancement mode:
Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Switching Voltage Regulators
-...
