TK3P50D - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	TK3P50D
Manufacturer	Toshiba
File Size	229.47 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK3P50D Datasheet
Additional preview pages of the TK3P50D datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 2.3 Ω (typ. ) (2) High forward transfer admittance: |Yfs| = 1.0 S (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK3P50D 1: Gate (G) 2: Drain (D)(HEAT SINK) 3: Source (S) DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-sour.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: May 22, 2014 |