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iscN-Channel MOSFET Transistor
TK4P55D
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 1.88Ω (MAX) ·Enhancement mode:
Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS ID IDM PD Tj Tstg
Drain-Source Voltage
550
V
Gate-Source Voltage
±30
V
Drain Current-Continuous
4
A
Drain Current-Single Pulsed
16
A
Total Dissipation @TC=25℃
80
W
Max. Operating Junction Temperature 150
℃
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX UNIT
1.56
℃/W
isc website：www.iscsemi.
TK4P55D Datasheet
