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TK4P55DA - Silicon N-Channel MOSFET

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Features

  • (1) Low drain-source on-resistance : RDS(ON) = 2.0 Ω (typ. ) (2) High forward transfer admittance : |Yfs| = 1.8 S (typ. ) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 550V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK4P55DA DPAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2009-12 1 2015-03-06 Rev.1.0 TK4P55DA 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics.

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Datasheet Details

Part number TK4P55DA
Manufacturer Toshiba Semiconductor
File Size 817.99 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-Channel MOS (π-MOS) TK4P55DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance : RDS(ON) = 2.0 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 1.8 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 550V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK4P55DA DPAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2009-12 1 2015-03-06 Rev.1.0 TK4P55DA 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 550 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 3.
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