Datasheet4U Logo Datasheet4U.com

TK50A04K3 - N-Channel MOSFET

Datasheet Summary

Features

  • br>.
  • Low drain-source on-resistance: RDS(ON) = 3.5mΩ (VGS = 10 V).
  • Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=1mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – TK50A04K3

Datasheet Details

Part number TK50A04K3
Manufacturer INCHANGE
File Size 247.26 KB
Description N-Channel MOSFET
Datasheet download datasheet TK50A04K3 Datasheet
Additional preview pages of the TK50A04K3 datasheet.

📁 Similar Datasheet

  • TK50A04K3 - MOSFETs (Toshiba Semiconductor)
  • TK50F15J1 - MOSFETs (Toshiba Semiconductor)
  • TK50J30D - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK50J60U - MOSFETs (Toshiba Semiconductor)
  • TK50P03M1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK50P04M1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK50S04K3L - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK50X15J1 - N-Channel MOSFET (Toshiba Semiconductor)
  • TK5401 - power supply IC (Takion)
  • TK540UOH - LED Lamp (Tyntek)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK50A04K3，ITK50A04K3 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3.5mΩ (VGS = 10 V) ·Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 42 Tj Max.
Published: |