Datasheet4U Logo Datasheet4U.com

TK50A04K3 - MOSFETs

Datasheet Summary

Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.7 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche.

📥 Download Datasheet

Datasheet preview – TK50A04K3

Datasheet Details

Part number TK50A04K3
Manufacturer Toshiba Semiconductor
File Size 221.58 KB
Description MOSFETs
Datasheet download datasheet TK50A04K3 Datasheet
Additional preview pages of the TK50A04K3 datasheet.

📁 Similar Datasheet

  • TK50A04K3 - N-Channel MOSFET (INCHANGE)
  • TK50J30D - N-Channel MOSFET (INCHANGE)
  • TK50J60U - N-Channel MOSFET (INCHANGE)
  • TK5401 - power supply IC (Takion)
  • TK540UOH - LED Lamp (Tyntek)
  • TK540UOL - SURFACE-MOUNT/AXIAL LED LAMP (Tyntek)
  • TK540UYH - LED Lamp (Tyntek)
  • TK5530 - READ ONLY TRANSPONDER (ATMEL Corporation)
  • TK5530HM - READ ONLY TRANSPONDER (ATMEL Corporation)
  • TK5530HM-232-PP - READ ONLY TRANSPONDER (ATMEL Corporation)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
TK50A04K3 MOSFETs Silicon N-channel MOS (U-MOS) TK50A04K3 1. Applications • • • Automotive Motor Drivers Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.7 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4.
Published: |